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2N2905 Bipolar Transistor
- 2N2905 Bipolar Transistor
- PNP SILICON TRANSISTORS
Description
The CENTRAL SEMICONDUCTOR 2N2904, 2N2905 series types are PNP silicon transistors manufactured by the epitaxial planar process, designed for small signal, general purpose and switching applications. Featured By RoboticsBD.
Product Images are shown for illustrative purposes only and may differ from the actual product.
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Features:
- Collector-Emitter Voltage: -40 V
- Collector-Base Voltage: -60 V
- Emitter-Base Voltage: -5 V
- Collector Current: -0.6 A
- Collector Dissipation - 0.8 W
- DC Current Gain (hfe) - 100 to 300
- Transition Frequency - 200 MHz
- Operating and Storage Junction
- Temperature Range -65 to +200 °C
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| General Specification | |
| Collector-Emitter Voltage: | 40 V |
| Collector-Base Voltage: | 60 V |
| Emitter-Base Voltage: | 5 V |
| Product Type | PNP SILICON TRANSISTORS |
| Operating Temperature Range (°C) | –55° C to +125° C |
| Mounting Type | Through Hole |
| Shipment Weight | 0.005 kg |
| Shipment Dimensions | 3 × 3 × 3 cm |
Please allow 5% measuring deviation due to manual measurement.
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Documentation:
Package Includes:
1 x 2N2905 Bipolar Transistor.
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Product Details
RBD-1472
27 Items
Specific References
- EAN13
- 1472
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- 2N2905 Bipolar Transistor
- PNP SILICON TRANSISTORS