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C829 NPN Transistor
- C829 NPN Transistor
- NPN Silicon Transistor.
Description
Featured By RoboticsBD.
Product Images are shown for illustrative purposes only and may differ from the actual product.
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Applications:
- Optimum for RF amplification, oscillation, mixing, and IF stage of FM/AM radios. RoboticsBD
Features:
- Optimum for RF amplification, oscillation, mixing, and IF stage of FM/AM radios
- Collector-base voltage (Emitter open) VCBO 30 V
- Collector-emitter voltage (Base open) VCEO 20 V
- Emitter-base voltage (Collector open) VEBO 5 V
- Collector current IC 30 mA
- Collector power dissipation PC 400 mW
- Junction temperature Tj 150 °C
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| General Specification | |
| Collector−Base Voltage VCBO | 30 |
| Collector−Emitter Voltage VCEO | 20 |
| Emitter-Base Voltage VEBO | 5 |
| Product Type | 2SC829 Silicon NPN epitaxial planer type |
| Operating Temperature Range (°C) | –55° C to +125° C |
| Mounting Type | Through Hole |
| Shipment Weight | 0.005 kg |
| Shipment Dimensions | 3 × 3 × 3 cm |
Please allow 5% measuring deviation due to manual measurement.
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Documentation:
Package Includes:
1 x C829 NPN Transistor.
RoboticsBD RoboticsBD RoboticsBD RoboticsBD RoboticsBD RoboticsBD RoboticsBD RoboticsBD RoboticsBD RoboticsBD
RoboticsBD RoboticsBD RoboticsBD RoboticsBD RoboticsBD RoboticsBD RoboticsBD RoboticsBD RoboticsBD RoboticsBD
Product Details
RBD-1475
358 Items
Specific References
- EAN13
- 1475
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- C829 NPN Transistor
- NPN Silicon Transistor.