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TIP142T
- TIP142T bipolar transistor
- Type - NPN
Description
The devices are manufactured in planar technology with “base island” layout and monolithic Darlington configuration. The resulting transistors show exceptional high gain performance coupled with very low saturation voltage. RoboticsBD
10 AMPERE DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS 60−100 VOLTS, 125 WATTS Designed for general−purpose amplifier and low frequency switching applications. Featured By RoboticsBD.
Product Images are shown for illustrative purposes only and may differ from the actual product.
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Applications:
- Linear and switching industrial equipment
Features:
- Type - NPN
- Collector-Emitter Voltage: 100 V
- Collector-Base Voltage: 100 V
- Emitter-Base Voltage: 5 V
- Collector Current: 8 A
- Collector Dissipation - 70 W
- DC Current Gain (hfe) - 1000 to 15000
- Operating and Storage Junction Temperature Range -65 to +150 °C
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| General Specification | |
| Collector−Base Voltage VCBO | 100V |
| Collector−Emitter Voltage VCEO | 100V |
| Emitter-Base Voltage VEBO | 5V |
| Product Type | TIP142T TIP147T Complementary power Darlington transistors |
| Operating Temperature Range (°C) | –55° C to +125° C |
| Mounting Type | Through Hole |
| Shipment Weight | 0.005 kg |
| Shipment Dimensions | 3 × 3 × 3 cm |
Please allow 5% measuring deviation due to manual measurement.
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Documentation:
Package Includes:
1 x TIP142T
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Product Details
RBD-1609
32 Items
Specific References
- EAN13
- 1609
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- TIP142T bipolar transistor
- Type - NPN