Reference: RBD-3591
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The MB85RC256V FRAM Breakout Module is a high-performance, non-volatile memory board that combines the speed of SRAM with the data retention capability of Flash. Unlike EEPROM or Flash memory, FRAM (Ferroelectric RAM) offers extremely high endurance—supporting up to 10 trillion read/write cycles—making it ideal for data logging, sensor recording, and embedded systems where frequent data storage is required.
The MB85RC256V FRAM Breakout Module is a high-performance, non-volatile memory board that combines the speed of SRAM with the data retention capability of Flash. Unlike EEPROM or Flash memory, FRAM (Ferroelectric RAM) offers extremely high endurance—supporting up to 10 trillion read/write cycles—making it ideal for data logging, sensor recording, and embedded systems where frequent data storage is required.
Non-volatile FRAM technology – retains data without power
Ultra-high endurance: Up to 10 trillion read/write cycles
Fast read/write operations – no write delays like EEPROM
Low power consumption, ideal for battery-powered devices
I2C communication interface (up to 20 MHz clock speed)
Wide operating voltage range: 2.7V–5.5V
Compact breakout module compatible with Arduino, ESP32, STM32, and Raspberry Pi
| Parameter | Description |
|---|---|
| Model | MB85RC256V |
| Memory Capacity | 32 KB (256 Kbit) |
| Interface | I2C (up to 20 MHz) |
| Device Address | 1010 + A2 + A1 + A0 (default: 0x50) |
| Operating Voltage | 2.7V – 5.5V |
| Data Retention | 10+ years |
| Write Endurance | 10 trillion cycles |
| Dimensions | Approx. 25 × 15 mm |
| Mount Type | Breakout board with pin headers |
Data logging and sensor storage systems
Black box or real-time data recording
Battery-powered embedded systems
Smart meters and wearable electronics
Buffering data during power loss
1 × MB85RC256V I2C FRAM Breakout Module
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We'll slide into your inbox when the product is back in stock.
Reference: RBD-0832
Reference: RBD-0937
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Reference: RBD-2736
Reference: RBD-2737
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The MB85RC256V FRAM Breakout Module is a high-performance, non-volatile memory board that combines the speed of SRAM with the data retention capability of Flash. Unlike EEPROM or Flash memory, FRAM (Ferroelectric RAM) offers extremely high endurance—supporting up to 10 trillion read/write cycles—making it ideal for data logging, sensor recording, and embedded systems where frequent data storage is required.
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