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    P-Channel MOSFET 55V 31A IRF5305 Robotics Bangladesh
    • P-Channel MOSFET 55V 31A IRF5305 Robotics Bangladesh

    P-Channel MOSFET 55V 31A IRF5305

    RBD-2614

    • P-Channel MOSFET IRF5305 rated for -55V and -31A high-power applications
    • Low Rds(on) of 60mΩ ensures minimal power loss and high efficiency
    • Compatible with 5V microcontrollers for easy control of high-power loads
    • Fast switching speed and rugged HEXFET design for reliability
    • Fully avalanche-rated with wide operating temperature range (-55°C to 175°C)
    • Ideal for automotive, motor control, and power switching circuits
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    Description

    The IRF5305 P-Channel MOSFET is a high-performance power transistor designed for efficient switching and load control. With a drain-source breakdown voltage of -55V and continuous drain current of -31A, it offers robust power handling for demanding applications. Its low on-resistance of just 60mΩ ensures reduced conduction losses, while compatibility with 5V microcontrollers allows seamless integration into embedded systems. Featuring fast switching speed, avalanche rating, and an extended operating temperature range, this MOSFET is highly reliable for automotive, industrial, and general-purpose power electronics projects. Whether you are driving motors, controlling headlights, or managing DC power loads, the IRF5305 delivers performance and durability. Featured By RoboticsBD.

    Product Images are shown for illustrative purposes only and may differ from the actual product.

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    Features:

    1. High Current Handling – Supports continuous drain current of -31A for heavy load applications.

    2. Low Rds(on) – Just 60mΩ for efficient power delivery and minimal heat generation.

    3. 5V Logic Level Compatible – Easily controlled by microcontrollers and logic circuits.

    4. Fast Switching Performance – Suitable for high-speed power switching applications.

    5. Wide Temperature Range – Operates reliably between -55°C to +175°C.

    6. Fully Avalanche Rated – Ensures durability in rugged operating conditions.

    7. Compact and Versatile – Useful in automotive, robotics, and general power electronics.

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    Applications:

    1. Automotive headlight and motor control systems.

    2. Robotics and mechatronics high-current switching.

    3. Power supply and DC-DC converter designs.

    4. Motor drivers and battery management systems.

    5. Home automation and industrial control circuits.

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    General Specifications
    Transistor TypeP-Channel MOSFET
    Part NumberIRF5305
    Drain-Source Breakdown Voltage (Vds)-55V
    Continuous Drain Current (Id)-31A
    On-State Resistance (Rds On)60mΩ
    Gate-Source Voltage (Vgs)±20V
    Total Gate Charge (Qg)63nC
    Power Dissipation (Pd)110W
    Operating Temperature Range-55°C to +175°C
    TechnologyHEXFET (5th Generation)
    Number of Channels1
    Shipment Weight0.0158 kg
    Shipment Dimensions5× 4× 3 cm

    Please allow 5% measuring deviation due to manual measurement.

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    Documentation:

    Related Documents

    pdf.jpg IRF5305 MOSFET Datasheet 

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    Package Includes:

    1 x P-Channel MOSFET 55V 31A IRF5305

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    Product Details
    RBD-2614
    96 Items

    Specific References

    EAN13
    2614
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