Reference: RBD-0306
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The IRF5305 P-Channel MOSFET is a high-performance power transistor designed for efficient switching and load control. With a drain-source breakdown voltage of -55V and continuous drain current of -31A, it offers robust power handling for demanding applications. Its low on-resistance of just 60mΩ ensures reduced conduction losses, while compatibility with 5V microcontrollers allows seamless integration into embedded systems. Featuring fast switching speed, avalanche rating, and an extended operating temperature range, this MOSFET is highly reliable for automotive, industrial, and general-purpose power electronics projects. Whether you are driving motors, controlling headlights, or managing DC power loads, the IRF5305 delivers performance and durability. Featured By RoboticsBD.
Product Images are shown for illustrative purposes only and may differ from the actual product.
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High Current Handling – Supports continuous drain current of -31A for heavy load applications.
Low Rds(on) – Just 60mΩ for efficient power delivery and minimal heat generation.
5V Logic Level Compatible – Easily controlled by microcontrollers and logic circuits.
Fast Switching Performance – Suitable for high-speed power switching applications.
Wide Temperature Range – Operates reliably between -55°C to +175°C.
Fully Avalanche Rated – Ensures durability in rugged operating conditions.
Compact and Versatile – Useful in automotive, robotics, and general power electronics.
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Automotive headlight and motor control systems.
Robotics and mechatronics high-current switching.
Power supply and DC-DC converter designs.
Motor drivers and battery management systems.
Home automation and industrial control circuits.
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| General Specifications | |
| Transistor Type | P-Channel MOSFET |
| Part Number | IRF5305 |
| Drain-Source Breakdown Voltage (Vds) | -55V |
| Continuous Drain Current (Id) | -31A |
| On-State Resistance (Rds On) | 60mΩ |
| Gate-Source Voltage (Vgs) | ±20V |
| Total Gate Charge (Qg) | 63nC |
| Power Dissipation (Pd) | 110W |
| Operating Temperature Range | -55°C to +175°C |
| Technology | HEXFET (5th Generation) |
| Number of Channels | 1 |
| Shipment Weight | 0.0158 kg |
| Shipment Dimensions | 5× 4× 3 cm |
Please allow 5% measuring deviation due to manual measurement.
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1 x P-Channel MOSFET 55V 31A IRF5305
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