Reference: RBD-1477
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The SUP40012EL N-Channel Power MOSFET is a high-performance enhancement-mode transistor engineered for heavy-duty switching and power control applications. With a maximum drain-source voltage of 40V and an impressive continuous drain current rating of up to 150A (with proper cooling), it is ideal for high-current systems. Thanks to its ultra-low on-resistance of approximately 1.7–2.3 mΩ, this MOSFET minimizes conduction losses and reduces heat generation, improving overall system efficiency. Moreover, its logic-level gate compatibility allows integration with microcontroller-based platforms such as Arduino, ESP32, and other embedded controllers when proper gate driving is applied. The TO-220 through-hole package ensures easy installation and supports heatsink attachment for reliable thermal management. As a result, it is widely used in robotics, battery management systems, DC-DC converters, and high-power switching circuits. Featured By RoboticsBD.
Product Images are shown for illustrative purposes only and may differ from the actual product.
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Ultra-Low RDS(on) – Reduces heat generation and maximizes efficiency.
High Current Capability (Up to 150A) – Suitable for demanding power applications.
40V Drain-Source Rating – Ideal for low-voltage high-current systems.
Logic-Level Gate Drive Support – Compatible with 3.3V and 5V control systems (with proper design).
Fast Switching Performance – Efficient in PWM and DC power circuits.
Robust Thermal Handling – Supports high junction temperature up to 175°C.
TO-220 Package – Easy PCB mounting and heatsink integration.
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Motor driver and robotics power control systems.
Battery management and protection circuits.
DC-DC converters and switching power supplies.
Inverter circuits and high-current switching systems.
Embedded electronics and IoT power distribution circuits.
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| General Specifications | |
| Product Name | SUP40012EL MOSFET |
| MOSFET Type | N-Channel Enhancement Mode |
| Drain-Source Voltage (VDS) | 40V Max |
| Continuous Drain Current | ~150A (with proper cooling) |
| On-Resistance (RDS(on)) | ~1.7–2.3 mΩ |
| Gate Threshold Voltage | ~1–2.5V |
| Gate-Source Voltage (Max) | ±20V |
| Package Type | TO-220 (3-Pin Through-Hole) |
| Max Junction Temperature | ~175°C |
| Shipment Weight | 0.005 kg |
| Shipment Dimensions | 3 × 3 × 3 cm |
Please allow 5% measuring deviation due to manual measurement.
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1 x Power MOSFET N-Ch 40V/150A SUP40012EL
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